Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2005-06-21
2005-06-21
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S094000, C257S101000, C257S103000
Reexamination Certificate
active
06909120
ABSTRACT:
According to an aspect of the present invention, a nitride semiconductor light emitting device includes a light emitting layer having a quantum well structure with quantum well layers and barrier layers laminated alternately. The well layer is formed of a nitride semiconductor containing In, and the barrier layer is formed of a nitride semiconductor layer containing As, P or Sb. According to another aspect of the present invention, a nitride semiconductor light emitting device includes a light emitting layer having a quantum well structure with quantum well layers and barrier layers laminated alternately. The well layer is formed of GaN1−x−y−zAsxPySbz(0<x+y+z≦0.3), and the barrier layer is formed of a nitride semiconductor containing In.
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U.S. Appl. No. 10/381,113, filed Mar. 20, 2003, Tsuda et al.
Ito Shigetoshi
Tsuda Yuhzoh
Louie Wai-Sing
Morrison & Foerster / LLP
Pham Long
Sharp Kabushiki Kaisha
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