Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Reexamination Certificate
2007-01-26
2009-08-18
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
C257S189000, C257S200000, C257SE21097, C257SE33034
Reexamination Certificate
active
07576351
ABSTRACT:
A nitride semiconductor light generating device comprises an n-type gallium nitride based semiconductor layer, a quantum well active layer including an InX1AlY1Ga1-X1-Y1N (1>X1>0, 1>Y1>0) well layer and an InX2AlY2Ga1-X2-Y2N (1>X2>0, 1>Y2>0) barrier layer, an InX3AlY3Ga1-X3-Y3N (1>X3>0, 1>Y3>0) layer provided between the quantum well active layer and the n-type gallium nitride based semiconductor layer, and a p-type AlGaN layer having a bandgap energy greater than that of the InX2AlY2Ga1-X2-Y2N barrier layer. The indium composition X3 is greater than an indium composition X1. The indium composition X3 is greater than an indium composition X2. The aluminum composition Y2 is smaller than an aluminum composition Y3. The aluminum composition Y1 is smaller than an aluminum composition Y3. The oxygen concentration of the quantum well active layer is lower than that of the InX3AlY3Ga1-X3-Y3N layer. The quantum well active layer is provided between the p-type AlGaN layer and the InX3AlY3Ga1-X3-Y3N layer.
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Hirayama Hideki
Kyono Takashi
McDermott Will & Emery LLP
Pert Evan
Riken
Sumitomo Electric Industries Ltd.
Wilson Scott R
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