Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2007-01-23
2011-11-01
Nguyen, Ha Tran T (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S079000, C257S103000, C257SE33068
Reexamination Certificate
active
08049235
ABSTRACT:
Provided is a nitride semiconductor light emitting element that has improved light extraction efficiency and a wide irradiation angle of outgoing light irrespective of the reflectance of a metal used for an electrode. An n side anti-reflection layer2and a p side Bragg reflection layer4are formed so as to sandwich an MQW active layer3that serves as a light emitting region, and the nitride semiconductor light emitting element has a double hetero structure. On top of the n side anti-reflection layer2, an n electrode1is formed. Meanwhile, at the lower side of the p side Bragg reflection layer4, a p electrode5, a reflection film7, and a pad electrode8are formed, and the pad electrode is bonded to a support substrate10with a conductive bonding layer9interposed in between. Both the n side anti-reflection layer2and the p side Bragg reflection layer4also serve as contact layers. The n side anti-reflection layer2is disposed on the light-extracting-direction side while the p side Bragg reflection layer4is disposed on the opposite side to the light-extracting-direction side. Consequently, the light extraction efficiency is improved.
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Meyer-Arendt, Introduction to Classical and Modern Optics, pp. 215-216 and 263, Englewood Cliffs, NJ: Prentice Hall, 1995.
Gupta Raj R
Nguyen Ha Tran T
Rabin & Berdo PC
Rohm & Co., Ltd.
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