Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-01-10
2006-01-10
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S013000, C257S014000, C257S015000, C257S094000, C257S095000, C257S099000, C257S190000, C438S022000, C438S029000, C438S046000, C438S047000
Reexamination Certificate
active
06984841
ABSTRACT:
The nitride semiconductor light emitting device includes a nitride semiconductor underlayer (102) grown on a surface of a nitride semiconductor substrate or a surface of a nitride semiconductor substrate layer laminated over a base substrate of other than a nitride semiconductor, and a light emitting device structure having a light emitting layer (106) including a quantum well layer or a quantum well layer and a barrier layer in contact with the quantum well layer between an n type layer (103–105) and a p type layer (107–110) over the nitride semiconductor underlayer. It includes a depression (D) not flattened on a surface of the light emitting device structure even after growth of the light emitting device structure.
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Hanaoka Daisuke
Ito Shigetoshi
Taneya Mototaka
Tsuda Yuhzoh
Yuasa Takayuki
Fenty Jesse
Jackson Jerome
Morrison & Foerster / LLP
Sharp Kabushiki Kaisha
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