Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2006-03-14
2006-03-14
Flynn, Nathan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S096000, C257S102000, C257S097000, C257S104000, C257S014000, C257S017000
Reexamination Certificate
active
07012283
ABSTRACT:
According to an aspect of the present invention, a nitride semiconductor light emitting device includes a light emitting layer (106) having a quantum well structure with quantum well layers and barrier layers laminated alternately. The well layer is formed of a nitride semiconductor containing In, and the barrier layer is formed of a nitride semiconductor layer containing As, P or Sb. According to another aspect of the present invention, a nitride semiconductor light emitting device includes a light emitting layer having a quantum well structure with quantum well layers and barrier layers laminated alternately. The well layer is formed of GaN1−x−y−zAsxPySbz(0<x+y+z≦0.3), and the barrier layer is formed of a nitride semiconductor containing In.
REFERENCES:
patent: 5606178 (1997-02-01), Schulman et al.
patent: 6028874 (2000-02-01), Wada et al.
patent: 6072197 (2000-06-01), Horino et al.
patent: 6162656 (2000-12-01), Kunisato et al.
patent: 6163038 (2000-12-01), Chen et al.
patent: 6399966 (2002-06-01), Tsuda et al.
patent: 6423984 (2002-07-01), Kato et al.
patent: 6555403 (2003-04-01), Domen et al.
patent: 6803596 (2004-10-01), Hata
patent: 2001/0002048 (2001-05-01), Koike et al.
patent: 2002/0158249 (2002-10-01), Tsuda et al.
patent: 2003/0001168 (2003-01-01), Tsuda et al.
patent: 0952645 (1999-10-01), None
patent: 08316581 (1996-11-01), None
patent: 10223983 (1998-08-01), None
patent: 10242585 (1998-09-01), None
patent: 10270804 (1998-10-01), None
patent: 11074622 (1999-03-01), None
patent: 11150294 (1999-06-01), None
patent: 11204880 (1999-07-01), None
patent: 11284282 (1999-10-01), None
patent: 2000183399 (2000-06-01), None
patent: 2000244013 (2000-09-01), None
Sakai, S. et al. (1998). “Green Light Emission from GaInNAs/GaN Multiple Quantum Well,”Japanese Journal of Applied Physics 37, Part 2(12B):L1508.
Araki Masahiro
Ito Shigetoshi
Tsuda Yuhzoh
Erdem Fazli
Flynn Nathan
Morrison & Foerster / LLP
Sharp Kabushiki Kaisha
LandOfFree
Nitride semiconductor light emitting element and optical... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nitride semiconductor light emitting element and optical..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride semiconductor light emitting element and optical... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3577543