Nitride semiconductor light emitting element and...

Details Nitride semiconductor light emitting element and... Nitride semiconductor light emitting element and...

2005-05-24

2005-05-24

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S086000, C438S022000, C438S046000

Reexamination Certificate

active

06897484

ABSTRACT:
The object of the present invention is to lower the oscillation threshold value and to improve the yield by improving the luminous efficiency in the central wavelength of a laser. To achieve the object, the nitride semiconductor light emitting element of the present invention includes a substrate, a lower clad layer formed of a nitride semiconductor containing Al and Ga formed thereon, a lower guide layer formed of a nitride semiconductor mainly containing In and Ga formed thereon, and an active layer including a nitride semiconductor mainly containing In and Ga formed thereon. The lower guide layer has a first layer and a second layer higher in In content than the first layer, successively stacked from the active layer side.

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