Nitride semiconductor light emitting element

Details Nitride semiconductor light emitting element Nitride semiconductor light emitting element

2009-10-15

2011-10-04

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S097000, C257S103000, C257SE33025, C257SE33028

Reexamination Certificate

active

08030673

ABSTRACT:
Provided is a nitride semiconductor light emitting element capable of producing an emission spectrum having two peaks with stable ratio of emission peak intensity. The nitride semiconductor light emitting1comprises an active layer12disposed between an n-type nitride semiconductor layer11and a p-type nitride semiconductor layer13. The active layer12comprises a first well layer14, second well layers15interposing the first well layer14and disposed at outermost sides among the well layers, and barrier layers16, 17disposed between each of the well layers. The second well layer15comprises a nitride semiconductor having a larger band gap energy than the band gap energy of a nitride semiconductor constituting the first well layer14, and the nitride semiconductor light emitting element1has peaks in the emission spectrum respectively corresponding to the first well layer14and the second well layer15.

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