Nitride semiconductor light emitting element

Details Nitride semiconductor light emitting element Nitride semiconductor light emitting element

2007-03-13

2010-02-16

Fahmy, Wael (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

C372S043010, C372S045010, C372S045011, C372S045012, C372S046012, C372S050121, C257S012000, C257S013000, C257S014000, C257S015000, C257S017000, C257S023000, C257S094000, C257S096000, C257S097000, C257S101000, C257S102000, C257S103000, C257SE33013, C257SE33014, C257SE33023, C257SE33025, C257SE21388, C257SE33034, C438S046000, C438S047000

Reexamination Certificate

active

07663138

ABSTRACT:
A n-type layer, a multiquantum well active layer comprising a plurality of pairs of an InGaN well layer/InGaN barrier layer, and a p-type layer are laminated on a substrate to provide a nitride semiconductor light emitting element. A composition of the InGaN barrier included in the multiquantum well active layer is expressed by InxGa1-xN (0.04≦x≦0.1), and a total thickness of InGaN layers comprising an In composition ratio within a range of 0.04 to 0.1 in the light emitting element including the InGaN barrier layers is not greater than 60 nm.

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English translation of Akasaka by a Machine through the JPO website.
Chinese Office Action dated May 9, 2008 with English translation.

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