Nitride semiconductor light emitting element

Details Nitride semiconductor light emitting element Nitride semiconductor light emitting element

2011-07-26

2011-07-26

Stultz, Jessica T (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S050110, C372S087000

Reexamination Certificate

active

07986722

ABSTRACT:
A method of manufacturing a nitride semiconductor light emitting element includes: forming a stacked layer body of a nitride semiconductor having a second conductive-type layer, a light emitting layer, and a first conductive-type layer stacked on a growth substrate in this order; forming a first Bragg reflector made of a dielectric multilayer film above the first conductive-type layer; forming a first electrode over the first Bragg reflector with the first electrode being electrically connected to the first conductive-type layer; bonding the stacked layer body to a supporting substrate via the first Bragg reflector and the first electrode; removing the growth substrate from the stacked layer body to expose the second conductive-type layer; and forming over the exposed second conductive-type layer a second electrode and a second Bragg reflector made of a dielectric multilayer film so that the second Bragg reflector faces the first Bragg reflector across the stacked layer body.

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