Nitride semiconductor light emitting element

Details Nitride semiconductor light emitting element Nitride semiconductor light emitting element

2011-08-23

2011-08-23

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257S103000

Reexamination Certificate

active

08004006

ABSTRACT:
Provided are a nitride semiconductor light emitting element which does not suffer a damage on a light emitting region and has a high luminance without deterioration, even though the nitride semiconductor light emitting element is one in which electrodes are disposed opposite to each other and an isolation trench for chip separation and laser lift-off is formed by etching; and a manufacturing method thereof. An n-type nitride semiconductor layer2has a step, formed in a position beyond an active layer3when viewed from a p side. Up to the position of this step A, a protective insulating film6covers a part of the n-type nitride semiconductor layer2,the active layer3,a p-type nitride semiconductor layer4,the side of a p electrode5and a part of the top side of the p electrode5.The use of a structure having a chip side face covered with the protective insulating film6prevents the active layer or the like from being exposed to an etching gas for a long time when an isolation trench for chip separation or laser lift-off is formed by etching.

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patent: 2005-259832 (2005-09-01), None
patent: WO-03/034508 (2003-04-01), None

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