Nitride semiconductor light-emitting diode chip and method...

Details Nitride semiconductor light-emitting diode chip and method... Nitride semiconductor light-emitting diode chip and method...

2006-09-12

2006-09-12

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S098000, C257S103000, C438S022000

Reexamination Certificate

active

07105859

ABSTRACT:
A nitride semiconductor light emitting diode chip includes a transparent substrate and a nitride semiconductor stacked-layer structure formed on the upper surface of the substrate, the nitride semiconductor stacked-layer structure including a light-emitting layer and a plurality of other semiconductor layers, the substrate having an arbitrary crystallographic main surface and having a thickness of more than 120 μm, thereby providing an improved efficiency of extracting light from the chip. At least one of the division planes of the chip may be angled relative to a plane perpendicular to the main surface of the substrate and the lower surface of the substrate may have a smaller area than an upper region of the nitride semiconductor stacked-layer structure to further improve the efficiency of extracting light from the chip.

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