Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2006-12-12
2006-12-12
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S013000, C257S081000, C257S085000, C257S088000, C257S090000, C257S094000, C257S096000, C257S098000, C257S103000, C257S918000, C257SE27120, C257SE27105, C257SE33001, C257SE33015, C257SE33023, C257SE33024, C257SE33025, C257SE33026, C257SE33027, C257SE33049, C257SE33068
Reexamination Certificate
active
07148514
ABSTRACT:
The invention relates to a nitride semiconductor LED and a fabrication method thereof. In the LED, a first nitride semiconductor layer, an active region a second nitride semiconductor layer of a light emitting structure are formed in their order on a transparent substrate. A dielectric mirror layer is formed on the underside of the substrate, and has at least a pair of alternating first dielectric film of a first refractivity and a second dielectric film of a second refractivity larger than the first refractivity. A lateral insulation layer is formed on the side of the substrate and the light emitting structure. The LED of the invention effectively collimate undesirably-directed light rays, which may be otherwise extinguished, to maximize luminous efficiency, and are protected by the dielectric mirror layer formed on the side thereof to remarkably improve ESD characteristics.
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Jang Jong Ho
Seo Jun Ho
Lowe Hauptman & Berner LLP.
Samsung Electro-Mechanics Co. Ltd.
Soward Ida M.
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