Nitride semiconductor light emitting diode

Details Nitride semiconductor light emitting diode Nitride semiconductor light emitting diode

2008-10-24

2011-10-04

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S094000, C257S097000, C257SE21006, C257SE21168, C257SE33061

Reexamination Certificate

active

08030667

ABSTRACT:
A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

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