Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2008-10-27
2010-12-14
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257SE33061, C257SE21006, C257SE21168, C257S094000, C313S468000, C313S630000
Reexamination Certificate
active
07851808
ABSTRACT:
A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.
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Japanese Office Action for application No. 2007-104244, mailed Jun. 1, 2010.
Kim Bum Joon
Shim Ji Hye
Song Sang-Yeob
Fox Brandon
Lowe Hauptman & Ham & Berner, LLP
Samsung LED Co., Ltd.
Vu David
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