Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2006-08-01
2006-08-01
Tran, Thien F. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S098000, C257S099000
Reexamination Certificate
active
07084432
ABSTRACT:
An increased proportion of light projected from a nitride semiconductor light emitting diode enters the area within a specified angle.The nitride semiconductor light emitting diode is provided with an active layer32consisting of a nitride semiconductor, and a light projecting face21.A reflecting mirror38is formed only on a side of the active layer32opposite the light projecting face21.The reflecting mirror38is formed at a location from the center of the active layer32approximately (k·λ/2+λ/4)
(where λ is the wavelength of light projected from the active layer32,n is the mean refractive index of an area between the active layer32and the reflecting mirror38,and k is an integer). This light emitting diode allows directivity to be increased sufficiently, and the coupling efficiency thereof with optical fiber consisting of POF or the like can be improved.
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Kachi Tetsu
Kato Satoru
Kabushiki Kaisha Toyota Chuo Kenkyusho
Tran Thien F.
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