Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-08-16
2011-08-16
Hoang, Quoc D (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C438S046000, C257SE25028, C257SE33030
Reexamination Certificate
active
07999249
ABSTRACT:
A nitride semiconductor light emitting device includes: a substrate for growing nitride semiconductor of a hexagonal crystal structure; a first nitride semiconductor layer of a first conductivity type formed above the substrate; an active layer formed on the first nitride semiconductor layer for emitting light when current flows; a second nitride semiconductor layer of a second conductivity type opposite to the first conductivity type formed on the active layer; texture formed above at least a partial area of the second nitride semiconductor layer and having a plurality of protrusions of a pyramid shape, each of the protrusions including a lower layer made of nitride semiconductor doped with impurities of the second conductivity type and an upper layer made of nitride semiconductor not intentionally doped with impurities; and a transparent electrode covering surfaces of the second nitride semiconductor layer and the texture.
REFERENCES:
patent: 6495862 (2002-12-01), Okazaki et al.
patent: 7244957 (2007-07-01), Nakajo et al.
patent: 3469484 (2003-09-01), None
Moteki Masahiko
Tanaka Satoshi
Yokobayashi Yusuke
Chen Yoshimura LLP
Hoang Quoc D
Stanley Electric Co. Ltd.
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