Nitride semiconductor light emitting device, method of...

Details Nitride semiconductor light emitting device, method of... Nitride semiconductor light emitting device, method of...

2008-06-23

2011-11-29

Kim, Jay C (Department: 2815)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S026000, C438S029000, C438S038000, C438S046000, C438S047000, C257S013000, C257S079000, C257S094000, C257S098000, C257SE33025, C257SE33028, C257SE33030, C257SE33033, C257SE33034, C257SE33060, C257SE33067, C257SE33068, C257SE33069

Reexamination Certificate

active

08067255

ABSTRACT:
Provided are a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminium nitride crystal or an aluminum oxynitride crystal.

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