Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-06-28
2011-06-28
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S013000, C257S079000, C257S094000, C257SE33025, C257SE33028, C257SE33030, C257SE33033, C257SE33034, C257SE33060, C257SE33067, C257SE33068, C257SE33069
Reexamination Certificate
active
07968898
ABSTRACT:
Provided are a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminium nitride crystal or an aluminum oxynitride crystal.
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Kamikawa Takeshi
Kawaguchi Yoshinobu
Harness & Dickey & Pierce P.L.C.
Kim Jay C
Parker Kenneth A
Sharp Kabushiki Kaisha
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