Nitride semiconductor light emitting device including...

Details Nitride semiconductor light emitting device including... Nitride semiconductor light emitting device including...

2011-01-11

2011-01-11

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257SE33068

Reexamination Certificate

active

07868344

ABSTRACT:
A nitride semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer; and an n-electrode formed on the n-type nitride semiconductor layer in which the active layer is not formed. The p-electrode and n-electrode are formed to have such a multilayer structure that an ohmic contact layer, a compound layer containing aluminum or silver, and a degradation preventing layer are sequentially laminated.

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patent: 2005/0116620 (2005-06-01), Kobayashi
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Japanese Office Action issued in Japanese Patent Application No. 2006-244343, mailed Mar. 2, 2010.
Japanese Office Action, with English translation, issued in Japanese Patent Application No. 2006-244343, mailed Oct. 12, 2010.

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