Nitride semiconductor light emitting device having ridge parts

Details Nitride semiconductor light emitting device having ridge parts Nitride semiconductor light emitting device having ridge parts

2011-07-05

2011-07-05

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257SE27104, C257SE29164

Reexamination Certificate

active

07973321

ABSTRACT:
As an example of a nitride semiconductor light emitting device, on a sapphire substrate, a GaN buffer layer, an n-type GaN contact layer, an MQW active layer, and a p-type GaN contact layer are sequentially stacked, and a partial region from the p-type GaN contact layer to the middle of the n-type GaN contact layer is mesa-etched so as to form an n electrode. Meanwhile, a p electrode is provided on the p-type GaN contact layer, and, in addition to the p electrode, multiple ridge parts are formed by crystal growth so as to be scattered. By providing the multiple ridge parts, device characteristics can be improved without causing damage on the GaN-based semiconductor layer.

REFERENCES:
patent: 2004/0266043 (2004-12-01), Oohata et al.
patent: 2006-310893 (2006-11-01), None
patent: 2007-005473 (2007-01-01), None

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