Nitride semiconductor light emitting device having electrode...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

Reexamination Certificate

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C257S094000, C257S101000, C257S079000, C438S022000, C438S047000, C372S004000, C372S087000

Reexamination Certificate

active

10719739

ABSTRACT:
A nitride semiconductor light emitting device includes at least a substrate, an active layer formed of a nitride semiconductor containing mainly In and Ga, a p-electrode and an n-electrode. At least one of the p-electrode and n-electrode is electrically separated into at least two regions.

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