Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-04-03
2007-04-03
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S094000, C257S101000, C257S079000, C438S022000, C438S047000, C372S004000, C372S087000
Reexamination Certificate
active
10719739
ABSTRACT:
A nitride semiconductor light emitting device includes at least a substrate, an active layer formed of a nitride semiconductor containing mainly In and Ga, a p-electrode and an n-electrode. At least one of the p-electrode and n-electrode is electrically separated into at least two regions.
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Ito Shigetoshi
Kamikawa Takeshi
Kawakami Toshiyuki
Matsuda Kyoko
Mouri Hirokazu
Morrison & Foerster / LLP
Pham Long
Rao Shrinivas H.
Sharp Kabushiki Kaisha
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