Nitride semiconductor light-emitting device comprising a...

Details Nitride semiconductor light-emitting device comprising a... Nitride semiconductor light-emitting device comprising a...

2006-11-22

2010-11-09

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C438S046000

Reexamination Certificate

active

07829914

ABSTRACT:
There are provided a nitride semiconductor light-emitting device and a method for manufacturing the same. The nitride semiconductor light-emitting device includes a buffer layer on a sapphire substrate, wherein the buffer layer includes a plurality of layers having different lattice constants, a first n-type nitride semiconductor layer on the buffer layer, an active layer on the first n-type nitride semiconductor layer, and a p-type nitride semiconductor layer on the active layer.

REFERENCES:
patent: 5656832 (1997-08-01), Ohba et al.
patent: 5679965 (1997-10-01), Schetzina
patent: 2001/0002048 (2001-05-01), Koike et al.

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