Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Reexamination Certificate
2007-01-17
2011-10-25
Kim, Jay C (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular dopant concentration or concentration profile
C257S013000, C257S079000, C257S094000, C257S102000, C257S103000, C257SE33023, C257SE33025, C257SE33028, C257SE33029, C257SE33030, C257SE33033, C257SE33034
Reexamination Certificate
active
08044430
ABSTRACT:
A nitride semiconductor light-emitting device according to the present invention includes a nitride based semiconductor substrate10and a nitride based semiconductor multilayer structure that has been formed on the semiconductor substrate10. The multilayer structure includes an active layer16that produces emission and multiple semiconductor layers12, 14and15that have been stacked one upon the other between the active layer16and the substrate10and that include an n-type dopant. Each and every one of the semiconductor layers12, 14and15includes Al atoms.
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International Search Report for corresponding Application No. PCT/JP2007/050562 dated Apr. 17, 2007.
Form PCT/IPEA/408 and a partial English translation.
Ishibashi Akihiko
Yokogawa Toshiya
Kim Jay C
Panasonic Corporation
Renner , Otto, Boisselle & Sklar, LLP
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