Nitride semiconductor light-emitting device and optical...

Details Nitride semiconductor light-emitting device and optical... Nitride semiconductor light-emitting device and optical...

2005-08-02

2005-08-02

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S013000, C257S103000, C372S045013, C372S050121

Reexamination Certificate

active

06924512

ABSTRACT:
A nitride semiconductor light emitting device includes an emission layer (106) having a multiple quantum well structure where a plurality of quantum well layers and a plurality of barrier layers are alternately stacked. The quantum well layer is formed of XN1-x-y-zAsxPySbz(0≦x≦0.15, 0≦y≦0.2, 0≦z≦0.05, x+y+z>0) where X represents one or more kinds of group III elements. The barrier layer is formed of a nitride semiconductor layer containing at least Al.

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