Nitride semiconductor light-emitting device and optical...

Details Nitride semiconductor light-emitting device and optical... Nitride semiconductor light-emitting device and optical...

2005-02-22

2005-02-22

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S094000, C257S096000, C438S047000, C372S043010

Reexamination Certificate

active

06858882

ABSTRACT:
A nitride semiconductor light-emitting device includes an emission layer (103) formed on a substrate (100), and the emission layer includes a quantum well layer of GaN1-x−y−zAsxPySbz(0<x+y+z≦0.3) containing Al.

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Borchert, B. et al. (1999) “1.29μm GaInNAs Multiple Quantum-well Ridge-waveguide Laser Diodes with Improved Performance,”Electronics Letters35(25):2204-2206.

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