Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2009-08-04
2011-11-22
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S103000, C257SE33067, C257SE33061, C257SE33064, C257SE21001, C438S002000, C438S031000
Reexamination Certificate
active
08063410
ABSTRACT:
A nitride semiconductor light-emitting device including a reflecting layer made of a dielectric material, a transparent conductive layer, a p-type nitride semiconductor layer, a light emitting layer and an n-type nitride semiconductor layer in this order and a method of manufacturing the same are provided. The transparent conductive layer is preferably made of a conductive metal oxide or an n-type nitride semiconductor, and the reflecting layer made of a dielectric material preferably has a multilayer structure obtained by alternately stacking a layer made of a dielectric material having a high refractive index and a layer made of a dielectric material having a low refractive index.
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Office Action dated Dec. 16, 2010 in corresponding Chinese Patent Application No. 200910165303 with English translation thereof.
Harness & Dickey & Pierce P.L.C.
Mandala Victor A
Moore Whitney T
Sharp Kabushiki Kaisha
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