Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2009-11-13
2011-10-04
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S014000, C257S015000, C257S094000, C257SE33005, C257SE33006, C257SE33010, C257SE21211, C438S043000, C438S046000, C438S047000
Reexamination Certificate
active
08030640
ABSTRACT:
A nitride semiconductor light emitting device includes a substrate, a first conductivity type nitride semiconductor layer disposed on the substrate and including a plurality of V-pits placed in a top surface thereof, a silicon compound formed in the vertex region of each of the V-pits, an active layer disposed on the first conductivity type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-pits, and a second conductivity type nitride semiconductor layer disposed on the active layer. The nitride semiconductor light emitting device, when receiving static electricity achieves high resistance to electrostatic discharge (ESD) since current is concentrated in the V-pits and the silicon compound placed on dislocations caused by lattice defects.
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Kim Dong Joon
Kim Yong Chun
Lee Dong Ju
Oh Jeong Tak
Mandala Victor A
McDermott Will & Emery LLP
Samsung LED Co., Ltd.
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