Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2007-10-29
2010-06-01
Wilson, Allan R. (Department: 2815)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S046000, C438S508000
Reexamination Certificate
active
07727787
ABSTRACT:
There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.
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Chinese Office Action, with English Translation, issued in Chinese Patent Application No. CN 2007101659.8 dated on Oct. 10, 2008.
Kim Dong Woo
Kim Tae Jun
Lee Su Yeol
Park Hyun Ju
Pyeon In Joon
McDermott Will & Emery LLP
Samsung Electro-Mechanics Co. Ltd.
Wilson Allan R.
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