Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2005-08-03
2009-06-30
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Reexamination Certificate
active
07554122
ABSTRACT:
In a nitride semiconductor light emitting device, a first conductivity type nitride semiconductor layer is provided on a support base and a second conductivity type nitride semiconductor layer is provided on the support base. An active region is provided between the first conductivity type nitride semiconductor layer and the second conductivity type nitride semiconductor layer. The active region includes an InX1AlY1Ga1-X1-Y1N well layer (1>X1>0 and 1>Y1>0) and an InX2AlY2Ga1-X2-Y2N barrier layer (1>X2>0 and 1>Y2>0). An InX3AlY3Ga1-X3-Y3N buffer layer (1>X3>0 and 1>Y3>0) is provided between the active region and the first conductivity type nitride semiconductor layer. A proportion X1of indium in the InX1AlY1Ga1-X1-Y1N well layer is smaller than a proportion X3of indium in the InX3AlY3Ga1-X3-Y3N buffer layer, and a proportion X2of indium in the InX2AlY2Ga1-X2-Y2N barrier layer is smaller than the proportion X3of indium in the InX3AlY3Ga1-X3-Y3N buffer layer.
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Chinese Office Action, with English translation, issued in Chinese Patent Application No. CN 200510088496.3, mailed Nov. 9, 2007.
Hirayama Hideki
Kyono Takashi
Ho Anthony
Jackson, Jr. Jerome
McDermott Will & Emery LLP
Riken
Sumitomo Electric Industries Ltd.
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