Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2011-08-16
2011-08-16
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
Reexamination Certificate
active
08000364
ABSTRACT:
The present invention provides a nitride semiconductor light emitting device having an n-type ohmic electrode with an Au face excellent in ohmic contacts and in mounting properties, and a method of manufacturing the same. The device uses an n-type ohmic electrode having a laminate structure that is composed of: a first layer containing Al as a main ingredient and having a thickness not greater than 10 nm or not less than 3 nm; a second layer containing one or more metals selected from Mo and Nb, so as to suppress the upward diffusion of Al; a third layer containing one or more metals selected from Ti and Pt, to suppress the downward diffusion of Al; and a fourth layer being made of Au, from the side in contact with an n-type nitride substrate in order of mention, and after the laminate structure is formed, the n-type ohmic electrode is annealed.
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Takei Aki
Terano Akihisa
Harvey Minsun
Miles & Stockbridge P.C.
Opnext Japan, Inc.
Stafford Patrick
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