Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2010-12-27
2011-10-04
Sayadian, Hrayr (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S042000, C438S043000, C438S044000, C438S046000, C257S012000, C257S013000, C257S014000, C257S015000, C257S079000, C257S094000, C257S095000, C257S099000, C257S109000, C257S190000, C257S200000, C257S201000, C257S618000, C257SE21108, C257SE33001, C257SE33002, C257SE33005, C257SE33013, C257SE33033, C257SE33043, C313S506000
Reexamination Certificate
active
08030110
ABSTRACT:
A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate (10) with a defect density as low as 106cm−2or less, a stripe-shaped depressed portion (16) is formed by etching. On this substrate (10), a nitride semiconductor film (11) is grown, and a laser stripe (12) is formed off the area right above the depressed portion (16). With this structure, the laser stripe (12) is free from strains, and the semiconductor laser device offers a long useful life. Moreover, the nitride semiconductor film (11) develops reduced cracks, resulting in a greatly increased yield rate.
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Araki Masahiro
Kamikawa Takeshi
Kaneko Yoshika
Yamada Eiji
Morrison & Foerster / LLP
Sayadian Hrayr
Sharp Kabushiki Kaisha
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