Nitride semiconductor light emitting device and method for...

Details Nitride semiconductor light emitting device and method for... Nitride semiconductor light emitting device and method for...

2008-07-11

2010-10-26

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010

Reexamination Certificate

active

07822088

ABSTRACT:
A nitride semiconductor light emitting device operating on a low voltage and excelling in reliability and performance is to be provided. It has a multi-layered p-type clad layer of at least two layers of a first p-type clad layer and a second p-type clad layer, wherein the second p-type clad layer contains a p-type impurity in a higher concentration the first p-type clad layer does, has a thickness ranging from 2 to 20 nm, and is formed of AlYGa1-YN whose Al content has a relationship of X≦Y to the first p-type clad layer doped with a p-type impurity containing at least an AlXGa1-XN (0<X≦0.2) layer, while a p-type ohmic electrode is formed at least over the second p-type clad layer in contact therewith.

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