Nitride semiconductor light-emitting device and method for...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Groove formation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE33025

Reexamination Certificate

active

07410819

ABSTRACT:
In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitride semiconductor substrate including the side walls of the groove portions, in such a manner that the underlying layer has a crystal surface in each of the groove portions and the crystal surface is tilted at an angle of from 53.5° to 63.4° with respect to the surface of the substrate. Over the underlying layer, a light-emitting-device structure composed of a lower cladding layer containing Al, an active layer, and an upper cladding layer containing Al is formed. According to the present invention, thickness nonuniformity and lack of surface flatness, which occur when accumulating a layer with light-emitting-device structure of nitride semiconductor over the nitride semiconductor substrate, are alleviated while inhibiting occurrence of cracking.

REFERENCES:
patent: 7109049 (2006-09-01), Takakura et al.
patent: 7157297 (2007-01-01), Kamikawa et al.
patent: 2002/0115267 (2002-08-01), Tomiya et al.
patent: 2004/0041156 (2004-03-01), Tsuda et al.
patent: 2005/0025204 (2005-02-01), Kamikawa et al.
patent: 2005/0141577 (2005-06-01), Ueta et al.
patent: 2005/0186694 (2005-08-01), Takakura et al.
patent: 2006/0094244 (2006-05-01), Yamada et al.
patent: 2002-246698 (2002-08-01), None
patent: 2005-236109 (2005-09-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Nitride semiconductor light-emitting device and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nitride semiconductor light-emitting device and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride semiconductor light-emitting device and method for... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3995878

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.