Nitride semiconductor light emitting device and method for...

Details Nitride semiconductor light emitting device and method for... Nitride semiconductor light emitting device and method for...

2008-01-15

2008-01-15

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S025000

Reexamination Certificate

active

07319044

ABSTRACT:
A nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer formed on the substrate and provided with an electrode region of a predetermined area adjacent to a center of one lateral side of the top surface of the substrate, an n-type electrode formed on the electrode region, an activation layer, a p-type nitride semiconductor layer, and a p-type electrode which has a bonding pad adjacent to a center of another lateral side opposite to the lateral side adjacent to the electrode region to have a predetermined space from the n-type electrode and a band-shaped extension connected to the bonding pad to extend along a lateral side of the top surface of the p-type nitride semiconductor layer in opposite directions from a connected portion of the extension with the bonding pad.

REFERENCES:
patent: 5652434 (1997-07-01), Nakamura et al.
patent: 5698865 (1997-12-01), Gerner et al.
patent: 6337493 (2002-01-01), Tanizawa et al.
patent: 6614056 (2003-09-01), Tarsa et al.
Patent Abstracts of Japan—Publication No. 09-097922, Published Apr. 8, 1997.
Patent Abstracts of Japan—Publication No. 10-275934, Published Oct. 13, 1998.

Affiliated with

Also associated with

Rating

Nitride semiconductor light emitting device and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nitride semiconductor light emitting device and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride semiconductor light emitting device and method for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2750623