Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2011-03-08
2011-03-08
Sayadian, Hrayr A (Department: 2814)
Coherent light generators
Particular active media
Semiconductor
C372S045010, C372S050100, C257S012000, C257S013000, C257S014000, C257S015000, C257S079000, C257S094000, C257S095000, C257S099000, C257S103000, C257S183000, C257S190000, C257S200000, C257S201000, C257S618000, C257SE21108, C257SE33001, C257SE33002, C257SE33005, C257SE33013, C257SE33033, C257SE33043, C438S042000, C438S043000, C438S044000, C438S046000, C438S047000, C313S506000
Reexamination Certificate
active
07903708
ABSTRACT:
A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate (10) with a defect density as low as 106cm−2or less, a stripe-shaped depressed portion (16) is formed by etching. On this substrate (10), a nitride semiconductor film (11) is grown, and a laser stripe (12) is formed off the area right above the depressed portion (16). With this structure, the laser stripe (12) is free from strains, and the semiconductor laser device offers a long useful life. Moreover, the nitride semiconductor film (11) develops reduced cracks, resulting in a greatly increased yield rate.
REFERENCES:
patent: 5500389 (1996-03-01), Lee et al.
patent: 6335546 (2002-01-01), Tsuda et al.
patent: 6500747 (2002-12-01), Lee et al.
patent: 6821805 (2004-11-01), Nakamura et al.
patent: 6984841 (2006-01-01), Tsuda et al.
patent: 7015058 (2006-03-01), Takatani et al.
patent: 7462882 (2008-12-01), Ueta et al.
patent: 7498608 (2009-03-01), Ito et al.
patent: 7579627 (2009-08-01), Ueta et al.
patent: 7692200 (2010-04-01), Kamikawa et al.
patent: 7709858 (2010-05-01), Tsuda et al.
patent: 7772611 (2010-08-01), Kamikawa et al.
patent: 2002/0137249 (2002-09-01), Ishida et al.
patent: 2002/0146912 (2002-10-01), Miyajima et al.
patent: 2003/0037722 (2003-02-01), Kiyoku et al.
patent: 2003/0080345 (2003-05-01), Motoki et al.
patent: 2005/0141577 (2005-06-01), Ueta et al.
patent: 2005/0151153 (2005-07-01), Kamikawa et al.
patent: 2007/0051961 (2007-03-01), Kamikawa et al.
patent: 1295365 (2001-05-01), None
patent: 2000-156524 (2000-06-01), None
patent: 2002-319733 (2002-10-01), None
patent: 2003-124573 (2003-04-01), None
Merriam-Webster OnLine definition of “above.”
Applied Physics Letters, vol. 73, No. 6 (Aug. 10, 1998), pp. 832-834.
Araki Masahiro
Kamikawa Takeshi
Kaneko Yoshika
Yamada Eiji
Morrison & Foerster / LLP
Sayadian Hrayr A
Sharp Kabushiki Kaisha
LandOfFree
Nitride semiconductor light-emitting device and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nitride semiconductor light-emitting device and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride semiconductor light-emitting device and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2746722