Nitride semiconductor light-emitting device and method for...

Details Nitride semiconductor light-emitting device and method for... Nitride semiconductor light-emitting device and method for...

2007-02-13

2011-10-04

Thomas, Tom (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant concentration or concentration profile

C257S102000, C257S103000, C257SE33017

Reexamination Certificate

active

08030680

ABSTRACT:
Disclosed are a nitride semiconductor light emitting device and a method for manufacturing the same. The nitride semiconductor light emitting device includes a first nitride layer, an active layer including at least one delta-doping layer on the first nitride layer through delta-doping, and a second nitride layer on the active layer.

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patent: 2006/0094145 (2006-05-01), Otsuka et al.
patent: 2006/0126688 (2006-06-01), Kneissl
patent: 2006/0244010 (2006-11-01), Saxler

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