Nitride semiconductor light-emitting device and manufacturing me

Details Nitride semiconductor light-emitting device and manufacturing me Nitride semiconductor light-emitting device and manufacturing me

1998-12-22

2000-11-14

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Non-single crystal, or recrystallized, material with...

257 76, 257103, H01L 2904

Patent

active

061473634

ABSTRACT:
A nitride semiconductor light emitting device which uses as a light emitting layer an indium-containing group-III nitride semiconductor layer of a multi-phase structure composed of a main phase and sub-phases having different indium contents is characterized in that the sub-phases are mainly formed of crystal whose boundary with the main phase is surrounded by a strained layer.

REFERENCES:
patent: 4224632 (1980-09-01), Iwamoto et al.
patent: 5693963 (1997-12-01), Fujimoto et al.
patent: 5886367 (1999-03-01), Udagawa
"InGaN/AIGaN Blue-Light-Emitting Diodes" by S. Nakamura, J. Vac. Sci. Technol. A 13(3), May/Jun. 1995, American Vacuum Society.
"Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes" by S. Nakamura, Jpn. J. Appln. Phys. vol. 34 (1995) pp. 1332-1335.

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