Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2005-08-19
2011-11-08
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S085000, C257S101000
Reexamination Certificate
active
08053794
ABSTRACT:
A nitride semiconductor light-emitting device according to the present invention comprises a first nitride semiconductor layer; an active layer formed on the first nitride semiconductor layer; a second nitride semiconductor layer formed on the active layer; and a third nitride semiconductor layer having AlIn, which is formed on the second nitride semiconductor layer. And a nitride semiconductor light-emitting device comprises a first nitride semiconductor layer; an n-AlInN cladding layer formed on the first nitride semiconductor layer; an n-InGaN layer formed on the n-AlInN cladding layer; an active layer formed on the n-InGaN layer; a p-InGaN layer formed on the active layer; a p-AlInN cladding layer formed on the p-InGaN layer; and a second nitride semiconductor layer formed on the p-AlInN cladding layer.
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Jeon et al., “Lateral Current Spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions,” Applied Phsyics Letters, vol. 78, No. 21, pp. 3265-3267, American Institute of Physics (May 21, 2001).
Birch & Stewart Kolasch & Birch, LLP
LG Innotek Co., Ltd
Smith Bradley K
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