Nitride semiconductor light emitting device and fabrication...

Details Nitride semiconductor light emitting device and fabrication... Nitride semiconductor light emitting device and fabrication...

2005-10-06

2011-10-04

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant concentration or concentration profile

C257S103000, C257SE33025, C257SE33030, C257SE21097, C438S047000, C438S094000

Reexamination Certificate

active

08030679

ABSTRACT:
Disclosed is a nitride semiconductor light emitting device including: one or more AllnN layers; an In-doped nitride semiconductor layer formed above the AllN layers; a first electrode contact layer formed above the In-doped nitride semiconductor layer; an active layer formed above the first electrode contact layer; and a p-type nitride semiconductor layer formed above the active layer. According to the nitride semiconductor light emitting device, a crystal defect of the active layer is suppressed, so that the reliability of the nitride semiconductor light emitting device is increased and the light output is enhanced.

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Wu et al.—InGaN/GaN LEDs with a Si-Doped InGaN/GaN Short-Period Superlattice Tunneling Contact Layer, Journal of Electronic Materials, Vol. 32, No. 5, May 2003.
Office Action dated Jun. 27, 2008 in Chinese Application No. 200580035544.0, filed Oct. 6, 2005.

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