Nitride semiconductor light emitting device and fabrication...

Details Nitride semiconductor light emitting device and fabrication... Nitride semiconductor light emitting device and fabrication...

2005-08-19

2010-10-05

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257S013000, C257S079000, C257S080000, C257S094000, C257S097000, C257S194000, C257SE21108, C257SE33005, C257SE33008, C257SE33025

Reexamination Certificate

active

07808010

ABSTRACT:
A nitride semiconductor light emitting device comprises a first nitride semiconductor layer, an active layer of a single or multiple quantum well structure formed on the first nitride semiconductor layer and including an InGaN well layer and a multilayer barrier layer, and a second nitride semiconductor layer formed on the active layer. A fabrication method of a nitride semiconductor light emitting device comprises: forming a buffer layer on a substrate, forming a GaN layer on the buffer layer, forming a first electrode layer on the GaN layer, forming an InxGa1-xN layer on the first electrode layer, forming on the first InxGa1-xN layer an active layer including an InGaN well layer and a multilayer barrier layer for emitting light, forming a p-GaN layer on the active layer, and forming a second electrode layer on the p-GaN layer.

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