Nitride semiconductor light emitting device and fabricating...

Details Nitride semiconductor light emitting device and fabricating... Nitride semiconductor light emitting device and fabricating...

2010-04-29

2011-10-25

Sandvik, Benjamin (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S097000, C257SE33028

Reexamination Certificate

active

08044386

ABSTRACT:
A nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed on the first nitride semiconductor layer and including at least one barrier layer grown under hydrogen atmosphere of a high temperature; and a second nitride semi conductor layer formed on the active layer, and a method of fabricating the same are provided. According to the light emitting device and method of fabricating the same, the light power of the light emitting device is increased and the operation reliability is enhanced.

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