Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2005-11-04
2010-06-01
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257SE33027, C257SE33033
Reexamination Certificate
active
07728338
ABSTRACT:
A nitride semiconductor light emitting device including: a first nitride semiconductor layer, an active layer formed on the first nitride semiconductor layer and including at least one barrier layer grown under hydrogen atmosphere of a high temperature; and a second nitride semi conductor layer formed on the active layer, and a method of fabricating the same are provided. According to the light emitting device and method of fabricating the same, the light power of the light emitting device is increased and the operation reliability is enhanced.
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Birch & Stewart Kolasch & Birch, LLP
Kuo W. Wendy
LG Innotek Co., Ltd
Tran Minh-Loan T
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