Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2011-04-19
2011-04-19
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S013000, C257S099000, C257S079000, C257S098000, C257SE33023, C257SE33064, C257SE33072, C438S046000
Reexamination Certificate
active
07928467
ABSTRACT:
There is provided a nitride semiconductor light emitting device including: a light emitting structure including n-type and p-type nitride semiconductor layers and an active layer disposed therebetween; n- and p-electrodes electrically connected to the n-type and p-type nitride semiconductor layers, respectively; and an n-type ohmic contact layer disposed between the n-type nitride semiconductor layer and the n-electrode and including a first layer and a second layer, the first layer formed of an In-containing material, and the second layer disposed on the first layer and formed of a transparent conductive oxide. The nitride semiconductor light emitting device including the n-electrode exhibits high light transmittance and superior electrical characteristics. Further, the nitride semiconductor light emitting device can be manufactured by an optimal method to ensure superb optical and electrical characteristics.
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Kang Ki Man
Kim Hyun Soo
Kim Yu Seung
Kwak Joon Seop
Lee Jin Hyun
Liu Benjamin Tzu-Hung
McDermott Will & Emery LLP
Ngo Ngan
Samsung LED Co., Ltd.
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