Nitride semiconductor light emitting device

Details Nitride semiconductor light emitting device Nitride semiconductor light emitting device

2008-04-15

2008-04-15

Sefer, A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S013000, C257S079000, C257SE21121, C257SE21126, C257SE21127, C257SE21131, C257SE21132, C438S022000

Reexamination Certificate

active

07358544

ABSTRACT:
A nitride semiconductor light emitting device comprising an n-side nitride semiconductor layer and a p-side nitride semiconductor layer formed on a substrate, with a light transmitting electrode10formed on the p-side nitride semiconductor layer, and the p-side pad electrode14formed for the connection with an outside circuit, and the n-side pad electrode12formed on the n-side nitride semiconductor layer for the connection with the outside circuit, so as to extract light on the p-side nitride semiconductor layer side, wherein taper angles of end faces of the light transmitting electrode10and/or the p-side nitride semiconductor layer are made different depending on the position.

REFERENCES:
patent: 6020602 (2000-02-01), Sugawara et al.
patent: 6107644 (2000-08-01), Shakuda et al.
patent: 6221684 (2001-04-01), Sugawara et al.
patent: 6281526 (2001-08-01), Nitta et al.
patent: 6417020 (2002-07-01), Nitta et al.
patent: 2001/0038103 (2001-11-01), Nitta et al.
patent: 2003/0025212 (2003-02-01), Bhat et al.
patent: 2003/0205712 (2003-11-01), Bhat et al.
patent: 2004/0026702 (2004-02-01), Yamada et al.
patent: 2004/0266043 (2004-12-01), Oohata et al.
patent: 2005/0052878 (2005-03-01), Yamada et al.
patent: 2006/0192247 (2006-08-01), Urashima et al.
patent: 0622858 (1994-11-01), None
patent: 0952617 (1999-10-01), None
patent: 1256987 (2002-11-01), None
patent: 1406314 (2004-04-01), None
patent: 1450415 (2004-08-01), None
patent: 06-314822 (1994-11-01), None
patent: 06-338632 (1994-12-01), None
patent: 07-045867 (1995-02-01), None
patent: 07-094782 (1995-04-01), None
patent: 07-094783 (1995-04-01), None
patent: 07-106633 (1995-04-01), None
patent: 07-111339 (1995-04-01), None
patent: 07-221103 (1995-08-01), None
patent: 07-254733 (1995-10-01), None
patent: 10-098211 (1998-04-01), None
patent: 10-144962 (1998-05-01), None
patent: 10-173230 (1998-06-01), None
patent: 10-209494 (1998-08-01), None
patent: 10-209495 (1998-08-01), None
patent: 10-209497 (1998-08-01), None
patent: 10-209498 (1998-08-01), None
patent: 10-209499 (1998-08-01), None
patent: 10-209507 (1998-08-01), None
patent: 10-247747 (1998-09-01), None
patent: 10-275933 (1998-10-01), None
patent: 11-214749 (1999-08-01), None
patent: 11-330559 (1999-11-01), None
patent: 2002-353504 (2002-12-01), None
patent: WO-03/007390 (2003-01-01), None
patent: WO 2004/023569 (2004-03-01), None

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