Nitride semiconductor light emitting device

Details Nitride semiconductor light emitting device Nitride semiconductor light emitting device

2011-03-08

2011-03-08

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S011000, C257S015000, C257S101000, C257S102000, C257S103000

Reexamination Certificate

active

07902561

ABSTRACT:
The present invention relates to a nitride semiconductor light emitting device including: a first nitride semiconductor layer having a super lattice structure of AlGaN
-GaN or AlGaN/GaN
-GaN; an active layer formed on the first nitride semiconductor layer to emit light; a second nitride semiconductor layer formed on the active layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. According to the present invention, the crystallinity of the active layer is enhanced, and optical power and reliability are also enhanced.

REFERENCES:
patent: 5932896 (1999-08-01), Sugiura et al.
patent: 6078064 (2000-06-01), Ming-Jiunn et al.
patent: 6266355 (2001-07-01), Sverdlov
patent: 6388275 (2002-05-01), Kano
patent: 6627552 (2003-09-01), Nishio et al.
patent: 2005/0230688 (2005-10-01), Lee
patent: 2006/0175600 (2006-08-01), Sato et al.
patent: 2008/0149955 (2008-06-01), Nakamura et al.
patent: 1221723 (2002-07-01), None
patent: 5-110139 (1993-04-01), None
patent: 9-232629 (1997-09-01), None
patent: 2002-0079659 (2002-10-01), None
patent: WO98/31055 (1998-07-01), None
patent: WO 2004/017431 (2004-02-01), None
Office Action dated Jul. 13, 2008 in Chinese Application No. 200580041795, filed Dec. 5, 2005.

Affiliated with

Also associated with

Rating

Nitride semiconductor light emitting device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nitride semiconductor light emitting device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride semiconductor light emitting device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2696526