Nitride semiconductor light-emitting device

Details Nitride semiconductor light-emitting device Nitride semiconductor light-emitting device

2008-09-12

2010-12-07

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257SE33064

Reexamination Certificate

active

07847312

ABSTRACT:
A nitride semiconductor light-emitting device including a first n-type nitride semiconductor layer, a light-emitting layer, a p-type nitride semiconductor layer, and a second n-type nitride semiconductor layer in this order, and further including an electrode formed of a transparent conductive film on the second n-type nitride semiconductor layer is provided. The nitride semiconductor light-emitting device has improved light extraction efficiency. The electrode formed of a transparent conductive film is preferably formed on a part of a surface of the second n-type nitride semiconductor layer.

REFERENCES:
patent: 2006/0002442 (2006-01-01), Haberern et al.
patent: 2007/0145392 (2007-06-01), Haberern et al.
patent: 2008/0135868 (2008-06-01), Okagawa et al.
patent: 2009/0026475 (2009-01-01), Yamaguchi et al.
patent: 1977398 (2007-06-01), None
patent: 2006-135311 (2006-05-01), None
patent: WO 2006/095566 (2006-09-01), None
patent: WO 2007/074897 (2007-07-01), None

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