Nitride semiconductor light emitting device

Details Nitride semiconductor light emitting device Nitride semiconductor light emitting device

2007-11-16

2009-11-03

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S094000, C257S103000, C257SE29315

Reexamination Certificate

active

07612362

ABSTRACT:
A nitride semiconductor light emitting device includes a substrate, and a first n-type nitride semiconductor layer, a light emitting layer, a first p-type nitride semiconductor layer, a second p-type nitride semiconductor layer, a p-type nitride semiconductor tunnel junction layer, an n-type nitride semiconductor tunnel junction layer and a second n-type nitride semiconductor layer that are formed on the substrate. The p-type nitride semiconductor tunnel junction layer and the n-type nitride semiconductor tunnel junction layer form a tunnel junction, and the p-type nitride semiconductor tunnel junction layer has an indium content ratio higher than that of the second p-type nitride semiconductor layer. At least one of the p-type nitride semiconductor tunnel junction layer and the n-type nitride semiconductor tunnel junction layer includes aluminum.

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Machine Translation of JP 2002-319703 A, Oct. 31, 2002, obtained from http://www.ipdl.inpit.go.jp/homepg—e.ipdl.
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