Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2004-10-13
2008-09-30
Sefer, A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S103000, C257S085000, C257SE33008, C257SE33028
Reexamination Certificate
active
07429756
ABSTRACT:
A nitride semiconductor light emitting device is provided. The nitride semiconductor light emitting device includes: an n-type nitride semiconductor layer; an Incontaining super lattice structure layer formed above the n-type nitride semiconductor layer; a first electrode contact layer formed above the super lattice structure layer; a first cluster layer formed above the first electrode contact layer; a first In-containing nitride gallium layer formed above the first cluster layer; a second cluster layer formed above the first In-containing nitride gallium layer; an active layer formed above the second cluster layer, for emitting light; a p-type nitride semiconductor layer formed above the active layer; and a second electrode contact layer formed above the p-type nitride semiconductor layer.
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LG Innotek Co. Ltd.
Sefer A.
Wilson Scott R
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