Nitride semiconductor light emitting device

Details Nitride semiconductor light emitting device Nitride semiconductor light emitting device

2008-04-15

2008-04-15

Sefer, A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S013000, C257S079000, C257SE21121, C257SE21126, C257SE21127, C257SE21131, C257SE21132, C438S022000

Reexamination Certificate

active

11092633

ABSTRACT:
A nitride semiconductor light emitting device comprising an n-side nitride semiconductor layer and a p-side nitride semiconductor layer formed on a substrate, with a light transmitting electrode10formed on the p-side nitride semiconductor layer, and the p-side pad electrode14formed for the connection with an outside circuit, and the n-side pad electrode12formed on the n-side nitride semiconductor layer for the connection with the outside circuit, so as to extract light on the p-side nitride semiconductor layer side, wherein taper angles of end faces of the light transmitting electrode10and/or the p-side nitride semiconductor layer are made different depending on the position.

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