Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – With structure for mounting semiconductor chip to lead frame
Reexamination Certificate
2006-08-08
2006-08-08
Owens, Douglas W (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
With structure for mounting semiconductor chip to lead frame
C257S099000
Reexamination Certificate
active
07087985
ABSTRACT:
In a nitride semiconductor LED having a light emitting structure, an n-doped semiconductor layer has a first region and a second region surrounding the first region, an active layer is formed on the second region of the n-doped semiconductor layer, and a p-doped nitride semiconductor layer is formed on the active layer. A p-electrode is formed on the p-doped semiconductor layer. An n-electrode is formed on the first region of the n-doped nitride semiconductor layer.
REFERENCES:
patent: 6307218 (2001-10-01), Steigerwald et al.
patent: 2001-237461 (2001-08-01), None
patent: 2001-308380 (2001-11-01), None
Cho Hyo Kyoung
Ko Kun Yoo
Park Young Ho
Yoo Seung Jin
Lowe Hauptman & Berner LLP
Owens Douglas W
Samsung Electro-Mechanics Co. Ltd.
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